DIODES FMMT555TA

DIODES · Transistors (BJTs) · MPN FMMT555TA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO150V
Emitter-Base Voltage VEBO5V
DC Current Gain50
Pd - Power Dissipation500mW
Number1 PNP
typePNP
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor PNP 150V 1A 100MHz 500mW Surface Mount SOT-23

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