DIODES FMMT413TD

DIODES · Transistors (BJTs) · MPN FMMT413TD

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain50
Pd - Power Dissipation500mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))150mV

Technical details

Bipolar (BJT) Transistor NPN 50V 100mA 150MHz 0.5W Surface Mount SOT-23

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