DIODES DZT5551-13

DIODES · Transistors (BJTs) · MPN DZT5551-13

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO160V
DC Current Gain80
Pd - Power Dissipation2W
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))150mV

Technical details

Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 2W Surface Mount SOT-223

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