DIODES DXTP3C100PSQ-13

DIODES · Transistors (BJTs) · MPN DXTP3C100PSQ-13

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)125MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO7V
DC Current Gain45
Pd - Power Dissipation5W
Number1 PNP
typePNP
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))220mV
Operating Temperature-55℃~+175℃

Technical details

Bipolar (BJT) Transistor PNP 100V 3A 125MHz 5W Surface Mount PowerDI-8(5x6)

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