DIODES DXTP3C100PDQ-13

DIODES · Transistors (BJTs) · MPN DXTP3C100PDQ-13

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO100V
Pd - Power Dissipation1.76W
Emitter-Base Voltage VEBO7V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))110mV
Current - Collector(Ic)3A

Technical details

100V 1.76W 3A PowerDI5060-8(TYPEUxD) Bipolar Transistor Arrays RoHS

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