DIODES · Transistors (BJTs) · MPN DXTN58100CFDB-7
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 150MHz |
| Collector - Emitter Voltage VCEO | 100V |
| DC Current Gain | 350 |
| Emitter-Base Voltage VEBO | 6V |
| Pd - Power Dissipation | 1.25W |
| Configuration | Standalone |
| Number | 1 NPN |
| Current - Collector(Ic) | 4A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 260mV |
Bipolar (BJT) Transistor 100V 4A 150MHz 1.25W Surface Mount DFN-3(2x2)