DIODES · Transistors (BJTs) · MPN DXTN10060DFJBWQ-7
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 125MHz |
| Collector - Emitter Voltage VCEO | 60V |
| DC Current Gain | 550 |
| Emitter-Base Voltage VEBO | 8V |
| Pd - Power Dissipation | 1.8W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 4A |
| Vce Saturation(VCE(sat)) | 320mV |
| Operating Temperature | -55℃~+175℃ |
Bipolar (BJT) Transistor NPN 60V 4A 125MHz 1.8W Surface Mount DFN-3(2x2)