DIODES DXTN07060BFG-7

DIODES · Transistors (BJTs) · MPN DXTN07060BFG-7

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)175MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO8.3V
DC Current Gain300
Pd - Power Dissipation3.1W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+175℃

Technical details

Bipolar (BJT) Transistor NPN 80V 3A 175MHz 3.1W Surface Mount PowerDI3333-8

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