DIODES DXT2014P5-13

DIODES · Transistors (BJTs) · MPN DXT2014P5-13

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Specifications

Current - Collector Cutoff20nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO140V
Emitter-Base Voltage VEBO7V
DC Current Gain100
Pd - Power Dissipation3.2W
Number1 PNP
typePNP
Current - Collector(Ic)4A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))360mV

Technical details

Bipolar (BJT) Transistor PNP 140V 4A 120MHz 3.2W PowerDI-5

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