DIODES DXT2012P5-13

DIODES · Transistors (BJTs) · MPN DXT2012P5-13

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Specifications

Current - Collector Cutoff1nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
DC Current Gain45
Pd - Power Dissipation3.2W
Number1 PNP
typePNP
Current - Collector(Ic)5.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))55mV

Technical details

Bipolar (BJT) Transistor PNP 60V 5.5A 120MHz 3.2W PowerDI-5

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