DIODES DVRN6056-7-F

DIODES · Transistors (BJTs) · MPN DVRN6056-7-F

No reviews yet — be the first to review DIODES DVRN6056-7-F.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
DC Current Gain80
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor NPN 40V 600mA 300mW Surface Mount SOT-26

Related Transistors (BJTs)