DIODES DSS45160FDB-7

DIODES · Transistors (BJTs) · MPN DSS45160FDB-7

No reviews yet — be the first to review DIODES DSS45160FDB-7.

Specifications

Current - Collector Cutoff100nA
Pd - Power Dissipation2.47W
DC Current Gain150
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
Transition frequency(fT)175MHz
typeNPN+PNP
Vce Saturation(VCE(sat))340mV
Number1 NPN + 1 PNP
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 60V 1A 175MHz 2.47W Surface Mount UDFN2020-6

Related Transistors (BJTs)