DIODES DSS2540M-7B

DIODES · Transistors (BJTs) · MPN DSS2540M-7B

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
DC Current Gain150
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))100mV

Technical details

Bipolar (BJT) Transistor PNP 40V 500mA 300MHz 1000mW Surface Mount DFN-3(1x0.6)

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