DIODES DSL12AW-7

DIODES · Transistors (BJTs) · MPN DSL12AW-7

No reviews yet — be the first to review DIODES DSL12AW-7.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO12V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation650mW
Number1 PNP
typePNP
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))95mV

Technical details

Bipolar (BJT) Transistor PNP 12V 2A 180MHz 650mW Surface Mount SOT-363

Related Transistors (BJTs)