DIODES · Transistors (BJTs) · MPN DRDNB16W-7
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| Transition frequency(fT) | 200MHz |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 56 |
| Vce Saturation(VCE(sat)) | 300mV |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 600mA |
| Output Voltage(VO(on)) | 300mV |
| Input Resistor | 1kΩ |
| Resistor Ratio | - |
| Pd - Power Dissipation | 200mW |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V |
| Voltage - Input(Max)(VI(off)) | 300mV@100uA,5V |
Pre-Biased Bipolar Transistor (BJT) 18V 600mA 200mW Surface Mount SOT-363