DIODES DN0150ALP4-7B

DIODES · Transistors (BJTs) · MPN DN0150ALP4-7B

No reviews yet — be the first to review DIODES DN0150ALP4-7B.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)60MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain120
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 50V 100mA 60MHz 1000mW Surface Mount DFN1006-3

Related Transistors (BJTs)