DIODES · FETs & Power MOSFETs · MPN DMW2013UFDEQ-13
No reviews yet — be the first to review DIODES DMW2013UFDEQ-13.
| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 52.6nC@8V |
| Current - Continuous Drain(Id) | 10.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | 810mW |
| Reverse Transfer Capacitance (Crss@Vds) | 242pF |
| RDS(on) | 11mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.508nF |
20V 10.5A 1.1V 810mW 11mΩ@4.5V 1 N-channel UDFN2020-6 Single FETs, MOSFETs RoHS