DIODES DMTH8030LPDW-13

DIODES · FETs & Power MOSFETs · MPN DMTH8030LPDW-13

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Specifications

Current - Continuous Drain(Id)28.5A
RDS(on)45mΩ@4.5V
Pd - Power Dissipation41W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage80V
Type-
Reverse Transfer Capacitance (Crss@Vds)19.5pF
Number2 N-Channel
Input Capacitance(Ciss)631pF
Gate Charge(Qg)10.4nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)200pF

Technical details

28.5A 45mΩ@4.5V 41W 2.5V 2 N-Channel DFN-8 FET, MOSFET Arrays RoHS

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