DIODES DMTH8012LPSW-13

DIODES · FETs & Power MOSFETs · MPN DMTH8012LPSW-13

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Specifications

Gate Charge(Qg)34nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)177pF
Current - Continuous Drain(Id)53.7A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation83.3W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)14mΩ@10V;16.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.949nF

Technical details

N-Channel 80V 53.7A 83.3W Surface Mount DFN-8(4.9x5.8)

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