DIODES DMTH8012LPSQ-13

DIODES · FETs & Power MOSFETs · MPN DMTH8012LPSQ-13

No reviews yet — be the first to review DIODES DMTH8012LPSQ-13.

Specifications

Configuration-
Drain to Source Voltage80V
Gate Charge(Qg)46.8nC@10V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)24.6pF
RDS(on)21mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.051nF
TypeN-Channel

Technical details

N-Channel 80V 50A 100W Surface Mount TDFN-8-Power

Related FETs & Power MOSFETs