DIODES · FETs & Power MOSFETs · MPN DMTH61M8SPSQ-13
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| Gate Charge(Qg) | 130.6nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 215A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.2W;167W |
| RDS(on) | 1.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.306nF |
60V 215A 4V 1.6mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS