DIODES DMTH61M8LPSQ-13

DIODES · FETs & Power MOSFETs · MPN DMTH61M8LPSQ-13

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)115.5nC@10V
Current - Continuous Drain(Id)225A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.2W;187.5W
Reverse Transfer Capacitance (Crss@Vds)157pF
RDS(on)1.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.32nF

Technical details

60V 225A 3V 1.6mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS

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