DIODES DMTH6016LPSQ-13

DIODES · FETs & Power MOSFETs · MPN DMTH6016LPSQ-13

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)8.4nC@4.5V;17nC@10V
Output Capacitance(Coss)282pF
Current - Continuous Drain(Id)37.1A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation37.5W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)6mΩ@10V;24mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)864pF

Technical details

N-Channel 60V 37.1A 37.5W Surface Mount PowerDI-5060-8

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