DIODES DMTH6015LPDWQ-13

DIODES · FETs & Power MOSFETs · MPN DMTH6015LPDWQ-13

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Specifications

Current - Continuous Drain(Id)36.3A
RDS(on)14.3mΩ@10V;19.2mΩ@4.5V
Pd - Power Dissipation39.5W
Gate Threshold Voltage (Vgs(th))1.3V
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)20.5pF
Number1 N-channel
Input Capacitance(Ciss)825pF
Gate Charge(Qg)14.3nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)244pF

Technical details

N-Channel 60V 36.3A 39.5W Surface Mount PowerDI-5060-8

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