DIODES DMTH6012LPSWQ-13

DIODES · FETs & Power MOSFETs · MPN DMTH6012LPSWQ-13

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Specifications

Gate Charge(Qg)13.6nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)281pF
Current - Continuous Drain(Id)50.5A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation53.6W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)10.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)785pF
TypeN-Channel

Technical details

N-Channel 60V 50.5A 53.6W Surface Mount PowerDI5060-8

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