DIODES DMTH6012LPSW-13

DIODES · FETs & Power MOSFETs · MPN DMTH6012LPSW-13

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Specifications

Gate Charge(Qg)13.6nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)11.5A;50.5A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation2.8W;53.6W
RDS(on)14mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)785pF

Technical details

60V 2.3V 14mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS

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