DIODES · FETs & Power MOSFETs · MPN DMTH6012LPSW-13
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| Gate Charge(Qg) | 13.6nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 11.5A;50.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 2.8W;53.6W |
| RDS(on) | 14mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 785pF |
60V 2.3V 14mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS