DIODES DMTH6010LPSWQ-13

DIODES · FETs & Power MOSFETs · MPN DMTH6010LPSWQ-13

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Specifications

Gate Charge(Qg)41.3nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)746pF
Current - Continuous Drain(Id)98A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation115W
Reverse Transfer Capacitance (Crss@Vds)38.5pF
RDS(on)5.3mΩ@10V;7.9mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.09nF

Technical details

N-Channel 60V 98A 115W Surface Mount PowerDI5060-8

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