DIODES DMTH6010LPSQ-13

DIODES · FETs & Power MOSFETs · MPN DMTH6010LPSQ-13

No reviews yet — be the first to review DIODES DMTH6010LPSQ-13.

Specifications

Gate Charge(Qg)19.3nC@4.5V;41.3nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)746pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)38.5pF
RDS(on)8mΩ@10V;12mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.09nF

Technical details

N-Channel 60V 100A 136W Surface Mount PowerDI5060-8

Related FETs & Power MOSFETs