DIODES DMTH6010LPD-13

DIODES · FETs & Power MOSFETs · MPN DMTH6010LPD-13

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Specifications

Current - Continuous Drain(Id)47.6A
RDS(on)16mΩ@4.5V
Pd - Power Dissipation37.5W
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)58pF
Number2 N-Channel
Input Capacitance(Ciss)2.615nF
Gate Charge(Qg)40.2nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)1.415nF

Technical details

47.6A 16mΩ@4.5V 37.5W 3V 2 N-Channel PowerDI5060-8 FET, MOSFET Arrays RoHS

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