DIODES DMTH6010LK3-13

DIODES · FETs & Power MOSFETs · MPN DMTH6010LK3-13

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Specifications

Gate Charge(Qg)19.3nC@4.5V
Drain to Source Voltage60V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)38.5pF
RDS(on)8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.09nF

Technical details

N-Channel 60V 70A 3.1W Surface Mount TO-252

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