DIODES · FETs & Power MOSFETs · MPN DMTH6009LPSQ-13
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 33.5nC@10V |
| Current - Continuous Drain(Id) | 11.76A;89.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 2.8W;136W |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF |
| RDS(on) | 10mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.925nF |
60V 2V 10mΩ@10V 1 N-channel PowerDI5060-8 Single FETs, MOSFETs RoHS