DIODES DMTH6004SPSQ-13

DIODES · FETs & Power MOSFETs · MPN DMTH6004SPSQ-13

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Specifications

Gate Charge(Qg)95.4nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)1.383nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation167W
Reverse Transfer Capacitance (Crss@Vds)105.2pF
RDS(on)2.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.556nF

Technical details

N-Channel 60V 100A 167W Surface Mount PowerDI5060-8

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