DIODES DMTH6004SK3Q-13

DIODES · FETs & Power MOSFETs · MPN DMTH6004SK3Q-13

No reviews yet — be the first to review DIODES DMTH6004SK3Q-13.

Specifications

Gate Charge(Qg)95.4nC
Drain to Source Voltage60V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation180W
Reverse Transfer Capacitance (Crss@Vds)105.2pF
RDS(on)3.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.556nF

Technical details

N-Channel 60V 100A 180W Surface Mount TO-252(DPAK)

Related FETs & Power MOSFETs