DIODES DMTH6004SK3-13

DIODES · FETs & Power MOSFETs · MPN DMTH6004SK3-13

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Specifications

Gate Charge(Qg)95.4nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.9W;180W
RDS(on)3.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.556nF

Technical details

N-Channel 60V 100A 3.9W 180W Surface Mount TO-252(DPAK)

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