DIODES DMTH6004SCTB-13

DIODES · FETs & Power MOSFETs · MPN DMTH6004SCTB-13

No reviews yet — be the first to review DIODES DMTH6004SCTB-13.

Specifications

Gate Charge(Qg)95.4nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation4.7W;136W
RDS(on)3.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.556nF

Technical details

60V 100A 4V 3.4mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs