DIODES DMTH4M70SPGW-13

DIODES · FETs & Power MOSFETs · MPN DMTH4M70SPGW-13

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Specifications

Gate Charge(Qg)117.1nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)460A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation5.6W;428W
Reverse Transfer Capacitance (Crss@Vds)116pF
RDS(on)0.7mΩ@10V
Number-
Input Capacitance(Ciss)53pF

Technical details

40V 460A 4V 0.7mΩ@10V Single FETs, MOSFETs RoHS

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