DIODES DMTH43M8LPSQ-13

DIODES · FETs & Power MOSFETs · MPN DMTH43M8LPSQ-13

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Specifications

Gate Charge(Qg)49nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)850pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)104pF
RDS(on)5mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)3.367nF
TypeN-Channel

Technical details

N-Channel 40V 100A 83W Surface Mount Power-DI-5060-8

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