DIODES DMTH43M8LK3Q-13

DIODES · FETs & Power MOSFETs · MPN DMTH43M8LK3Q-13

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Specifications

Gate Charge(Qg)38.5nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation88W
Reverse Transfer Capacitance (Crss@Vds)52pF
RDS(on)3.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.693nF

Technical details

N-Channel 40V 100A 88W Surface Mount TO-252

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