DIODES DMTH43M8LFGQ-13

DIODES · FETs & Power MOSFETs · MPN DMTH43M8LFGQ-13

No reviews yet — be the first to review DIODES DMTH43M8LFGQ-13.

Specifications

Gate Charge(Qg)40.1nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)904pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation65.2W
Reverse Transfer Capacitance (Crss@Vds)88pF
RDS(on)2.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.798nF

Technical details

N-Channel 40V 100A 65.2W Surface Mount PowerDI3333-8

Related FETs & Power MOSFETs