DIODES DMTH41M8SPSQ-13

DIODES · FETs & Power MOSFETs · MPN DMTH41M8SPSQ-13

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Specifications

Gate Charge(Qg)79.5nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)59pF
RDS(on)1.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.968nF

Technical details

N-Channel 40V 100A 150W Surface Mount PowerDI5060-8

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