DIODES DMTH4008LPSQ-13

DIODES · FETs & Power MOSFETs · MPN DMTH4008LPSQ-13

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Specifications

Gate Charge(Qg)15.3nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)64.8A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation55.5W
Reverse Transfer Capacitance (Crss@Vds)27pF
RDS(on)8.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.088nF

Technical details

N-Channel 40V 64.8A 55.5W Surface Mount PowerDI-5060-8

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