DIODES DMTH4004SCTBQ-13

DIODES · FETs & Power MOSFETs · MPN DMTH4004SCTBQ-13

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Specifications

Gate Charge(Qg)68.6nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.441nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)102pF
RDS(on)2.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.305nF

Technical details

N-Channel 40V 100A 136W Surface Mount TO-263

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