DIODES · FETs & Power MOSFETs · MPN DMTH12H007SK3-13
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| Gate Charge(Qg) | 44nC@10V |
|---|---|
| Drain to Source Voltage | 120V |
| Current - Continuous Drain(Id) | 86A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.3W |
| RDS(on) | 8.9mΩ@10V |
| Type | N-Channel |
120V 86A 4V 3.3W 8.9mΩ@10V N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS