DIODES · FETs & Power MOSFETs · MPN DMTH10H4M6SPS-13
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| Gate Charge(Qg) | 66nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 118.8A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2.7W;136W |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF |
| RDS(on) | 4.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.327nF |
N-Channel 100V 2.7W 136W Surface Mount PowerDI5060-8