DIODES · FETs & Power MOSFETs · MPN DMTH10H4M5LPSWQ-13
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| Output Capacitance(Coss) | 1.302nF |
|---|---|
| Pd - Power Dissipation | 136W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 80nC@10V |
| Current - Continuous Drain(Id) | 107A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 25.5pF |
| RDS(on) | 4.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.843nF |
136W 100V 107A 2.5V 4.9mΩ@10V 1 N-channel N-Channel PowerDI5060-8 Single FETs, MOSFETs RoHS