DIODES DMTH10H2M5STLWQ-13

DIODES · FETs & Power MOSFETs · MPN DMTH10H2M5STLWQ-13

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Specifications

Gate Charge(Qg)124.4nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)2.43nF
Current - Continuous Drain(Id)215A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation230.8W
Reverse Transfer Capacitance (Crss@Vds)17.7pF
RDS(on)1.68mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.45nF
TypeN-Channel

Technical details

N-Channel 100V 215A 230.8W Surface Mount SOT-363

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