DIODES DMTH10H1M7STLW-13

DIODES · FETs & Power MOSFETs · MPN DMTH10H1M7STLW-13

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Specifications

Gate Charge(Qg)147nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)250A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)58pF
RDS(on)2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.871nF

Technical details

N-Channel 100V 250A 250W Surface Mount PowerDI1012-8

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