DIODES DMTH10H032LPSW-13

DIODES · FETs & Power MOSFETs · MPN DMTH10H032LPSW-13

No reviews yet — be the first to review DIODES DMTH10H032LPSW-13.

Specifications

Drain to Source Voltage100V
Gate Charge(Qg)11.9nC@10V
Current - Continuous Drain(Id)33A
Output Capacitance(Coss)165pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)6.9pF
RDS(on)50mΩ@4.5V
Input Capacitance(Ciss)683pF
TypeN-Channel

Technical details

100V 33A 2.5V 68W 50mΩ@4.5V N-Channel PowerDI5060-8 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs