DIODES · FETs & Power MOSFETs · MPN DMTH10H032LFVWQ-7
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| Gate Charge(Qg) | 11.9nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 26A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.8W |
| RDS(on) | 50mΩ@4.5V |
| Type | N-Channel |
100V 26A 2.5V 3.8W 50mΩ@4.5V N-Channel PowerDI3333-8 Single FETs, MOSFETs RoHS