DIODES DMTH10H032LFVWQ-13

DIODES · FETs & Power MOSFETs · MPN DMTH10H032LFVWQ-13

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)11.9nC@10V
Current - Continuous Drain(Id)26A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.8W
RDS(on)50mΩ@4.5V
Input Capacitance(Ciss)683pF
TypeN-Channel

Technical details

100V 26A 2.5V 3.8W 50mΩ@4.5V N-Channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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